to ? 92 1.emitter 2.base 3.collector jiangsu changjiang electronics technology co., ltd to-92 plastic-encapsulate transistors MPSA44 transistor (npn) features high breakdown voltage www. cj- ele c . c o m 1 , , 2 0 1 colle c tor - base voltage 4 00 v colle c tor - e m itter voltage v e m itter - base voltage 6 v colle c tor current - continuous 0 .3 a colle c tor power dissip ation 625 m w jun c tion te m perature 1 st orage t e m perature - 55 t her m al resist an c e ro m jun c tion o a m bien t / w 2 00 4 00 equivalent circuit to-92 bulk 1000pcs/bag tape 2000pcs/box
www.cj-elec.com parameter symbol test conditions min typ max unit co llector-base breakdown voltage v (br)cbo i c = 0 . 1 m a,i e =0 00 v co llector-emitter breakdown voltage v (br)ceo * i c =1 m a,i b = 0 400 v emitter-b ase breakdown voltage v (br)ebo i e =0 . 1 m a,i c =0 6 v co llector cut-off current i cbo v cb = 400v,i e = 0 0 . 1 a emitter cut-off current i ebo v eb =4 v,i c = 0 0 . 1 a h fe(1) * v ce = 10v, i c = 1 m a 40 h fe(2) * v ce =10v, i c =10 m a 50 200 h fe(3) * v ce = 10v, i c = 50 m a 45 dc cu rrent gain h fe(4) * v ce = 10v, i c = 100 m a 40 v ce (sat)(1) * i c =1 m a,i b =0 . 1 m a 0 . 4 v v ce (sat)(2) * i c = 10 m a,i b = 1 m a 0 . 5 co llector-emitter saturation voltage v ce (sat)(3) * i c = 50 m a,i b = 5 m a 0 . 75 bas e-emitter saturation voltage v be (sa t) * i c = 10 m a, i b = 1 m a 0 . 75 v co llector output capacitance c o b v cb = 20v,i e =0, f=1mhz 7 pf emitte r input capacitance c ib v eb =0 . 5v,i c =0 , f=1mhz 130 pf *pu l s e t e st: pu l s e w idth 300 s, duty c y cle 2 . 0% . a t =25 unless otherwise specified
3 3 a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d4. 0 4.700 1 2 1 3 d1 3.430 0.135 e4 .300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 ! ( ( - 1.270 typ 0.050 typ &9:"-.*& ( &9: ** " 5 4441&5&1& % 0 ((
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